Method for manufacturing photoelectric conversion device

A method for manufacturing a photoelectric conversion device comprising:

• forming a first semiconductor layer over a single crystal semiconductor substrate, the first semiconductor layer containing a first impurity which imparts one conductivity type;
• forming a damaged layer in the single crystal semiconductor substrate by introducing an ion beam through one surface of the single crystal semiconductor substrate;
• attaching the single crystal semiconductor substrate to a supporting substrate having an insulating surface with a bonding layer interposed therebetween;
• performing heat treatment on the single crystal semiconductor substrate to cleave the damaged layer and separate a single crystal semiconductor layer from the single crystal semiconductor substrate;
• irradiating a cleavage plane of the single crystal semiconductor layer with a pulsed laser beam in an atmosphere containing an inert gas and oxygen to provide roughness for a surface of the single crystal semiconductor layer;
• forming a reflecting film over the single crystal semiconductor layer;
• and
• forming a second semiconductor layer containing a second impurity having an opposite conductivity type to the one conductivity type on a cleavage plane side of the single crystal semiconductor layer, after forming the reflecting film.

A method for manufacturing a photoelectric conversion device comprising:

• forming a first semiconductor layer over a single crystal semiconductor substrate, the first semiconductor layer containing a first impurity which imparts one conductivity type;
• forming a damaged layer in the single crystal semiconductor substrate by introducing an ion beam through one surface of the single crystal semiconductor substrate;
• attaching the single crystal semiconductor substrate to a supporting substrate having an insulating surface with a bonding layer interposed therebetween;
• performing heat treatment on the single crystal semiconductor substrate to cleave the damaged layer and separate a single crystal semiconductor layer from the single crystal semiconductor substrate;
• irradiating a cleavage plane of the single crystal semiconductor layer with a pulsed laser beam in an atmosphere containing an inert gas and oxygen to provide roughness for a surface of the single crystal semiconductor layer;
• forming a second semiconductor layer containing a second impurity having an opposite conductivity type to the one conductivity type on a cleavage plane side of the single crystal semiconductor layer;
• forming an electrode in the single crystal semiconductor layer electrically connected to the first semiconductor layer;
• and
• forming a reflecting film over the second semiconductor layer and the electrode.