Light emitting diode and fabrication method thereof
AssigneeLG Innotek Co., Ltd.
InventorSeong Jae KIM
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Abstract
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.
Claims20
A method for fabricating a light emitting diode, comprising:
- forming a first conductive type semiconductor layer;
- forming at least one GaN layer having indium on the first conductive type semiconductor layer;
- forming at least one GaN layer directly on the GaN layer having indium;
- forming an active layer directly on the GaN layer;
- and
- forming a second conductive type semiconductor layer on the active layer, wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å.
A method for fabricating a light emitting diode, comprising:
- preparing a substrate;
- forming a buffer layer on the substrate;
- forming a first GaN layer on the buffer layer;
- forming a first conductive type semiconductor layer on the first GaN layer;
- forming at least one GaN layer having indium on the first conductive type semiconductor layer;
- forming at least one second GaN layer directly on the GaN layer having indium;
- forming an active layer directly on the second GaN layer;
- and
- forming a second conductive type semiconductor layer on the active layer,
- wherein a total thickness of the first GaN layer and the first conductive type semiconductor layer is 2-6 μm.
A method for fabricating a light emitting diode, comprising:
- forming a first conductive type semiconductor layer;
- forming at least one GaN layer having indium on the first conductive type semiconductor layer;
- forming at least one GaN layer directly on the GaN layer having indium, wherein the GaN layer has a thickness of 10-30 Å;
- forming an active layer including InGaN directly on the GaN layer, wherein the active layer includes at least one well layer and at least one barrier layer;
- and
- forming a second conductive type semiconductor layer on the active layer, wherein the second conductive type semiconductor layer has a thickness of 750-1500 Å.
Dependencies are inferred from the claim text.