Nitride semiconductor light-emitting device and fabrication method thereof
AssigneeLG Innotek Co., Ltd.
InventorHo Sang YOON
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Abstract
A method of fabricating a nitride semiconductor light-emitting device providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device.
Claims20
A method of fabricating a nitride semiconductor light-emitting device, the method comprising:
- preparing a nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer includes Mg—H complexes;
- bringing the p-type nitride semiconductor layer into contact with a hydrogen separation metal in a chamber;
- activating the Mg—H complexes;
- supplying hydrogen gas in the chamber;
- and
- removing hydrogen from the p-type nitride semiconductor layer.
A method of fabricating a nitride semiconductor light-emitting device, the method comprising:
- preparing a nitride semiconductor layer including an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer includes Mg—H complexes;
- forming a hydrogen separation metal on the p-type nitride semiconductor layer in a chamber;
- carrying out a heat treatment to the nitride semiconductor layer and the hydrogen separation metal;
- and
- removing hydrogen from the p-type nitride semiconductor layer.
A method of fabricating a nitride semiconductor light-emitting device, the method comprising:
- preparing a nitride semiconductor layer including an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer includes hydrogen;
- forming a hydrogen separation metal on the p-type nitride semiconductor layer in a chamber;
- activating the hydrogen;
- and
- forming a metal hydride via a reaction between the hydrogen and the hydrogen separation metal.
Dependencies are inferred from the claim text.