Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHisashi Okuchi
Life of this patent
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Abstract
A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated SiN etching amount of the phosphoric acid solution, determining necessity of quality adjustment of the phosphoric acid solution, based on correlation between the integrated SiN etching amount calculated and etching selectivity to oxide film, and calculating a quality adjustment amount of the phosphoric acid solution as needed, and also including a mechanism to adjust the quality of the phosphoric acid solution based on the quality adjustment amount calculated.
Claims13
-8. (canceled)
A manufacturing method for a semiconductor device treating a SiN film formed on a wafer is treated with phosphoric acid solution, comprising:
- calculating integrated SiN etching amount of phosphoric acid solution provided for treatment of the wafer;
- determining necessity of quality adjustment of the phosphoric acid solution based on correlations between the integrated SiN etching amount calculated and etching selectivity to oxide film;
- calculating a quality adjustment amount of the phosphoric acid solution determined to be necessary;
- adjusting quality of the phosphoric acid solution based on the quality adjustment amount calculated;
- and
- treating the wafer using the phosphoric acid solution, the quality of the phosphoric acid solution is adjusted.
Dependencies are inferred from the claim text.