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US 2010/0136482 A1Published application
Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYuji Harada, Jun Hatakeyama, Koji Hasegawa, Kazunori Maeda, Tomohiro Kobayashi
Life of this patent
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Abstract
A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.
Claims10
A resist composition comprising
- (A) a polymer comprising recurring units of the general formula (1),
- (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, said base polymer becoming soluble in alkaline developer under the action of acid,
- (C) a compound capable of generating an acid upon exposure to high-energy radiation, and
- (D) an organic solvent,
- wherein R1 is hydrogen, methyl or trifluoromethyl, R2a and R2b are hydrogen or straight, branched or cyclic C1-C15 alkyl, R2a and R2b may bond together to form a ring with the carbon atom to which they are attached, R3 is a single bond or straight, branched or cyclic C1-C15 alkylene, and R4 is a straight, branched or cyclic C1-C20 alkyl or fluoroalkyl which may contain —O— or —C(═O)—.
2 more elements
Dependencies are inferred from the claim text.