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US 2010/0136466 A1Published application
Exposure mask and method for manufacturing semiconductor device using the same
AssigneeHynix Semiconductor Inc.
InventorsSoon Ho OH, Ki Sung Kwon
Life of this patent
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Abstract
A method for manufacturing a semiconductor device comprises forming a photoresist pattern by an exposure process with an exposure mask including a shifter pattern and further performing a reflow process on the photoresist pattern to obtain a line/space pattern having a wave type with a uniform a pattern line-width and an improved profile.
Claims12
An exposure mask for fabricating a semiconductor device, the mask comprising:
- a substrate including a transparent pattern, a first opaque pattern, a second opaque pattern neighboring the first opaque pattern and a third opaque pattern neighboring the second opaque pattern;
- a first island type shifter pattern formed overlapping with the transparent pattern;
- and
- a second island type shifter pattern formed between the second opaque pattern and the third opaque pattern, and overlapping with the transparent pattern,
- wherein the first island type shifter pattern and the second island type shifter pattern are arranged diagonally.
2 more elements
Dependencies are inferred from the claim text.