Multiple-layer, multiple film having the same and electronic device having the same

A multiple layer comprising:

• two or more first sub multiple layers;
• and
• one or more second sub multiple layers,
• wherein at least one layer of the second sub multiple layers is positioned between the two first sub multiple layers, the thickness thereof is more than 0 nm and less than 5 nm, and
• the first sub multiple layer is thicker than the second sub multiple layer, and
• the first and second sub multiple layers are formed of a mixture of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO;
• and one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof.

A multiple film comprising:

• a base layer;
• a multiple layer that is provided on at least one side of the base layer, and comprises two or more first inorganic material layers, and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of more than 0 nm and less than 5 nm,
• wherein the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and
• the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof.

A multiple film comprising:

• a base layer;
• a multiple layer that is provided on at least one side of the base layer, and comprises two or more first sub multiple layers, and one or more second sub multiple layers,
• wherein at least one layer of the second sub multiple layer is positioned between the two first sub multiple layers, the thickness thereof is more than 0 nm and less than 5 nm, and the first sub multiple layer is thicker than the second sub multiple layer, and
• the first and second sub multiple layers are formed of a mixture of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO;
• and one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof.