Film for manufacturing semiconductor device and method of manufacturing the same
OwnerYasuhiro Amanoinventor
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Abstract
A present invention relates to a film for manufacturing a semiconductor device in which a cover film is pasted onto a laminated film, wherein the shrinkage in the longitudinal direction and in the lateral direction in the laminated film after peeling the cover film and leaving for 24 hours at a temperature of 23±2° C. is in a range of 0 to 2% compared to the laminated film before pasting of the cover film.
Claims11
A film for manufacturing a semiconductor device in which a cover film is pasted onto a laminated film, wherein
- the shrinkage in the longitudinal direction and in the lateral direction in the laminated film after peeling the cover film and leaving for 24 hours at a temperature of 23±2° C. is in a range of 0 to 2% compared to the laminated film before pasting of the cover film.
A method of manufacturing the film for manufacturing a semiconductor device in which the cover film is laminated on the laminated film, wherein
- the cover film is pasted to the laminated film in a condition of which the cover film is stretched by applying a tensile force on the cover film in the longitudinal direction, and the shrinkage in the longitudinal direction and the lateral direction in the laminated film after peeling the cover film and leaving it for 24 hours at 23±2° C. is adjusted to be in a range of 0 to 2% to the laminated film before pasting the cover film.
Dependencies are inferred from the claim text.