Nitride semiconductor heterostructures and related methods
AssigneeCrystal IS, Inc.
InventorsLeo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
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Abstract
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
Claims25
-19. (canceled)
A solid-state ultraviolet (UV) light-emitting device comprising:
- at least two layers each independently selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof;
- and
- therebelow, an undoped AlGaN graded layer disposed over a substrate of AlN, a bottom portion of the AlGaN graded layer being lattice-matched to the substrate,
- wherein the substrate of AlN has a dislocation density of about 10,000 cm−2 or less.
A solid-state ultraviolet (UV) light-emitting diode comprising at least two layers each independently selected from the group consisting of AlN, GaN, InN, and any binary or tertiary alloy combination thereof, wherein the light-emitting diode is disposed atop a substrate of AlN having a dislocation density of about 10,000 cm−2 or less and is configured to convert a >10% fraction of electric power into UV radiation power.
Dependencies are inferred from the claim text.