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US 2010/0135098 A1Published application
Power control circuit and semiconductor memory device using the same
AssigneeHynix Semiconductor Inc.
InventorTae Jin Kang
Life of this patent
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Abstract
A semiconductor memory device comprises a power control circuit for outputting a power voltage in a read operation period and a write operation period, and an internal circuit operating by the power voltage supplied thereto.
Claims25
A semiconductor memory device, comprising:
- a power control circuit for outputting a power voltage in a read operation period and a write operation period and interrupting output of the power voltage outside of the read operation period and write operation period;
- and
- an internal circuit operating by the power voltage supplied thereto.
A power control circuit, comprising:
- a write-off signal generating unit for generating a write-off signal which is enabled when write operation is terminated and all banks are precharged;
- a read-off signal generating unit for generating a read-off signal which is enabled when read operation is terminated and all banks are precharged;
- a switching signal generating unit for receiving receiving the write-off signal and the read-off signal and generate a switching signal;
- and
- a switching unit for controlling supply of a power voltage in response to the switching signal.
2 more elements
Dependencies are inferred from the claim text.