Reading of the state of a non-volatile storage element
AssigneeSTMicroelectronics S.r.l.
InventorSylvie Wuidart
Life of this patent
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Abstract
A method for reading of the state of a non-volatile memory element including conditioning the frequency of a first oscillator to the state of this element, and comparing the frequency of the first oscillator with the predetermined frequency of a second oscillator, selected between two possible frequency values for the first oscillator, according to the state of the storage element.
Claims6
1-7. (canceled)
A method of writing a value to a storage element, the storage element comprising a first circuit and an oscillating circuit producing an oscillating signal having a frequency based on a characteristic of the first circuit, the first circuit comprising at least one resistor and at least one capacitor, the method comprising:
- changing a value of a first circuit so as to change the frequency of the oscillating signal;
- and
- generating an output indicative of the value stored in the storage element based at least in part on a comparison of the frequency of the oscillating signal to a second frequency of a second oscillating signal.
Dependencies are inferred from the claim text.