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US 2010/0135086 A1Published application
Method of operating non-volatile memory cell and memory device utilizing the method
AssigneeMacronix International Co., Ltd.
InventorChao-I Wu
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Abstract
A method of operating a non-volatile memory cell is described, including pre-erasing the cell through double-side biased (DSB) injection of a first type of carrier and programming the cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.
Claims17
A method of operating a non-volatile memory cell, comprising:
- pre-erasing the cell through double-side biased (DSB) injection of a first type of carrier;
- and
- programming the cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.
A memory device, comprising:
- a memory cell;
- a first logic for pre-erasing the memory cell through double-side biased (DSB) injection of a first type of carrier;
- and
- a second logic for programming the memory cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.
1 more element
Dependencies are inferred from the claim text.