Method of performing read operation in flash memory device
AssigneeHynix Semiconductor Inc.
InventorsYou Sung KIM, Duck Ju Kim
Life of this patent
Estimating the term…
Abstract
A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.
Claims6
A method of performing a read operation in a flash memory device having a memory cell array including at least one block, the block having a plurality of pages, the method comprising:
- receiving a read command to read a selected page in the block;
- determining whether or not all pages in the block have been programmed;
- performing a dummy data program operation on any page in the block that is determined not to have been programmed;
- and
- executing the read command to read the selected page after performing the dummy data program operation.
Dependencies are inferred from the claim text.