Reading non-volatile multilevel memory cells
AssigneeMicron Technology, Inc.
InventorsViolante Moschiano, Giovanni Santin, Michele Incarnati
Life of this patent
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Abstract
Embodiments of the present disclosure provide methods, devices, modules, and systems for reading non-volatile multilevel memory cells. One method includes receiving a request to read data stored in a first cell of a first word line, performing a read operation on an adjacent cell of a second word line in response to the request, determining whether the first cell is in a disturbed condition based on the read operation. The method includes reading data stored in the first cell in response to the read request by applying a read reference voltage to the first word line and adjusting a sensing parameter if the first cell is in the disturbed condition.
Claims25
A method for sensing memory cells, comprising:
- performing a sensing operation on an adjacent cell in response to a request to sense data stored in a first cell;
- determining whether the first cell is in a disturbed condition based on the sensing operation;
- and
- sensing data stored in the first cell in response to the request by applying a reference voltage to a gate of the first cell and adjusting a sensing parameter if the first cell is in the disturbed condition.
A method for sensing memory cells, comprising:
- performing a sensing operation on a second cell in response to a request to sense data stored in a first cell, wherein the second cell is adjacent to the first cell;
- determining whether the first cell is in a disturbed condition based on the sensing operation performed on the second cell;
- sensing data stored in the first cell, based on the sensing operation performed on the second cell, by:
- using a first sensing parameter to sense the first cell if it is determined to be in an undisturbed condition;
- and
- using a different sensing parameter to sense the first cell if it is determined to be in the disturbed condition.
A memory device comprising:
- an array of memory cells;
- and
- control circuitry coupled to the array and configured to execute a method that includes:
- receiving a request to sense data from a first cell;
- performing a sensing operation on an adjacent cell in response to the request;
- determining whether the first cell is in a disturbed condition based, at least partially, on the sensing operation;
- and
- sensing data from the first cell in response to the request by:
- applying a reference voltage to a gate of the first cell;
- using a particular sensing parameter if the first cell is determined to be in an undisturbed condition;
- and
- using an adjusted sensing parameter if the first cell is determined to be in the disturbed condition.
A memory device comprising:
- an array memory cells;
- and
- control circuitry coupled to the array and configured to execute a method for sensing data from the memory cells, wherein the method includes:
- receiving a request to sense data from a first number of cells that are programmed together;
- in response to the request, performing a sensing operation on a second number of cells of that are programmed together and are adjacent to the first number of cells;
- determining whether each of the first number of cells are in a disturbed condition based on the sensing operation performed on the second number of cells;
- and
- sensing data stored in the first number of cells, in response to the request, by:
- using a first sensing parameter to sense those of the first number of cells determined to be in an undisturbed condition;
- and
- using a different sensing parameter to sense those of the first number of cells determined to be in the disturbed condition.
Dependencies are inferred from the claim text.