Resistance-change memory device

A resistance-change memory device comprising:

• a stack constituting a tunnel magnetoresistance effect element that includes a magnetic layer in which a direction of magnetization is switchable and that is formed between a first conductive layer and a second conductive layer, the stack being included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection,
• wherein the stack is formed such that a contact surface between the stack and the first conductive layer is arranged at a position displaced from a position at which a contact surface between the stack and the second conductive layer is arranged, in a direction perpendicular to the switching direction of magnetization.