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US 2010/0135064 A1Published application
Switch and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMin-Sang Kim, Ji-Myoung Lee, Hyun-Jun Bae, Dong-Won Kim, Jun Seo, Yong-Hyun Kwon, Weon-Wi Jang, Keun-Hwi Cho
Life of this patent
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Abstract
A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
Claims30
A memory device comprising:
- a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node is configured to store an electrical charge, and the first electrode is movable to connect to the storage node when the second electrode is energized.
A memory device comprising:
- a memory cell that includes a first electrode, a second electrode, and a storage node, the first electrode is separated from the second electrode with a first gap and is separated from the storage node with a second gap, and the first electrode moves to connect to the storage node when the second electrode is energized.
A memory device comprising:
- a first memory cell including a first word line, a first capacitor, and a first bit line;
- a second memory cell including a second word line, a second capacitor, and a second bit line connected to the first bit line;
- wherein the first bit line is movable to connect to the first capacitor when the first word line is energized and the second bit line is movable to connect to the second capacitor when the second word line is energized.
A memory device comprising:
- a substrate;
- a capacitor formed on the substrate, the capacitor stores an electrical charge;
- a word line disposed over the capacitor;
- and
- a bit line fixed to an insulator pattern formed over the word line, the bit line is separated from the word line and the capacitor with a gap, the bit line having a vertical portion substantially perpendicular with respect to the major horizontal plane of the substrate,
- wherein the vertical portion of the bit line is movable to connect to the capacitor when the word line is energized.
3 more elements
Dependencies are inferred from the claim text.