Memory device and storage apparatus
AssigneeSony Corporation
InventorsKatsuhisa Aratani, Akihiro Maesaka, Akira Kouchiyama, Tomohito Tsushima
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Abstract
A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
Claims19
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film is made of an insulating material, said memory thin film and said first electrode or said second electrode have therebetween formed a conductive or semiconductive thin film containing any one of elements selected from Cu, Ag, Zn or any one of elements selected from Te, S, Se and said conductive or semiconductive thin film contains a rare earth element.
A storage apparatus comprising:
- a memory device comprising a first electrode, a second electrode and a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film is made of an insulating material, said memory thin film and said first electrode or said second electrode have therebetween formed a conductive or semiconductive thin film containing any one of elements selected from Cu, Ag, Zn or any one of elements selected from Te, S, Se;
- an interconnection connected to the side of said first electrode;
- and
- an interconnection connected to the side of said second electrode, wherein a large number of said memory devices are located.
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film is made of an insulating material or a semiconductor material and said memory thin film and said first electrode or said second electrode have therebetween formed a thin film containing CuTe.
A storage apparatus comprising:
- a memory device comprising a first electrode, a second electrode and a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film is made of an insulating material or a semiconductor material and said memory thin film and said first electrode or said second electrode have therebetween formed a thin film containing CuTe;
- an interconnection connected to the side of said first electrode;
- and
- an interconnection connected to the side of said second electrode, wherein a large number of said memory devices are located.
A memory device comprising:
- a first electrode;
- a second electrode;
- a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film or a layer in contact with said memory thin film contains any one of elements selected from Cu, Ag, Zn, said memory thin film or a layer in contact with said memory thin film contains any one of elements selected from Te, S, Se and an underlayer material of said memory thin film has an amorphous structure.
A storage apparatus comprising:
- a memory device comprising a first electrode, a second electrode and a memory thin film sandwiched between said first and second electrodes, wherein said memory thin film or a layer in contact with said memory thin film contains any one of elements selected from Cu, Ag, Zn, said memory thin film or a layer in contact with said memory thin film contains any one of elements selected from Te, S, Se and an underlayer of said memory thin film has an amorphous structure;
- an interconnection connected to the side of said first electrode;
- and
- an interconnection connected to the side of said second electrode, wherein a large number of memory devices are located.
Dependencies are inferred from the claim text.