Capacitor device and method of manufacturing the same
AssigneeShinko Electric Industries Co., Ltd.
InventorKoichi Tanaka
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Abstract
A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.
Claims4
A capacitor device comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a recess portion formed in the insulating layer;
- a lower electrode formed to be buried in the recess portion in the insulating layer;
- a dielectric layer pattern formed on the lower electrode;
- an upper electrode formed on the dielectric layer pattern.
A capacitor device comprising:
- a substrate;
- a lower electrode formed over the substrate;
- an insulating layer formed on the lower electrode;
- an opening portion formed in a portion of the insulating layer on the lower electrode;
- a dielectric layer pattern formed to be buried in the opening portion of the insulating layer;
- an upper electrode formed on the dielectric layer pattern.
Dependencies are inferred from the claim text.