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US 2010/0134668 A1Published application
Image sensors
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Eun Park, Yong Jei Lee, Jung Chak Ahn, Dong-Yoon Jang
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Abstract
An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.
Claims18
An image sensor comprising:
- a plurality of photodiodes;
- and
- a plurality of wells configured to isolate the plurality of photodiodes from each other, each of the plurality of wells including,
- a P-type well region;
- and
- an N-type well region formed within the P-type well region.
3 more elements
Dependencies are inferred from the claim text.