Solid-state imaging device and solid-state imaging device manufacturing method

A solid-state imaging device comprising:

• pixels arranged in a matrix shape above a semiconductor substrate, each of said pixels having a photoelectric conversion element and a color filter layer which is formed above said photoelectric conversion element;
• transfer electrodes formed above boundary areas between said photoelectric conversion elements which are adjacent to each other;
• convex parts formed on said respective transfer electrodes;
• and
• first transparent planarization films formed on said respective color filter layers,
• wherein each of said color filter layers is formed so as to cover an area ranging from a summit of a corresponding one of said convex parts to a summit of an adjacent one of said convex parts, and
• each of said color filter layers is formed so as to be thinner in peripheral parts above the summits of said respective convex parts than in a center part above an area between the summits of said convex parts.

A solid-state imaging device comprising:

• pixels arranged in a matrix shape above a semiconductor substrate, each of said pixels having a photoelectric conversion element and a color filter layer which is formed above said photoelectric conversion element;
• transfer electrodes formed above boundary areas between photoelectric conversion elements which are adjacent to each other;
• and
• first transparent planarization films formed on said respective color filter layers,
• wherein each of said color filter layers is formed so as to cover an area above a corresponding one of said photoelectric conversion elements and corresponding ones of said transfer electrodes which are adjacent and respectively arranged on opposite sides of said corresponding photoelectric conversion element,
• each of said color filter layers is formed so as to be thinner in peripheral parts above said respective corresponding transfer electrodes than in a center part above the corresponding one of said photoelectric conversion elements, and
• a bottom surface of said color filter layer is lowest above said photoelectric conversion element.