Display device

A display device comprising:

• a display area on a substrate, comprising a plurality of pixels that respectively comprises a first thin-film transistor therein;
• and
• a peripheral circuit formed in a periphery of the display area and on the substrate, wherein the peripheral circuit comprises a second thin-film transistor therein,
• wherein the first thin-film transistor comprises:
• a gate electrode;
• a gate insulating film formed so as to cover the gate electrode;
• an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode when viewed planarly;
• an insulating film formed so as to cover the semiconductor layer;
• and
• a pair of electrodes electrically connected to the semiconductor layer respectively through a pair of through holes that are formed through the insulating film,
• wherein the semiconductor layer of the first thin-film transistors is formed of a laminate obtained by sequentially laminating a crystalline semiconductor layer, and an amorphous semiconductor layer, and
• wherein each of the pair of electrodes is formed of a laminate obtained by sequentially laminating a semiconductor layer doped with impurities and a metal layer;
• wherein the second thin-film transistors comprises:
• a gate electrode;
• a gate insulating film formed so as to cover the gate electrode;
• an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode as viewed planarly;
• and
• a pair of electrodes formed on a surface of the semiconductor layer,
• wherein the semiconductor layer of the second thin-film transistors is formed of the laminate obtained by sequentially laminating the crystalline semiconductor layer and the amorphous semiconductor layer, and
• wherein each of the pair of electrodes is formed of the laminate obtained by sequentially laminating the semiconductor layer doped with the impurities and the metal layer.

A display device comprising:

• a display area on a substrate including a plurality of pixels that comprise a first thin-film transistor therein;
• and
• a peripheral circuit formed in a periphery of the display area and on the substrate, wherein the peripheral circuit comprises a second thin-film transistor therein
• wherein the first thin-film transistors comprises:
• a gate electrode;
• a gate insulating film formed so as to cover the gate electrode;
• an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode without protruding from the gate electrode when viewed planarly;
• an insulating film formed so as to cover the semiconductor layer;
• and
• a pair of electrodes electrically connected to the semiconductor layer respectively through a pair of through holes formed through the insulating film,
• wherein the semiconductor layer of the first thin-film transistors is formed of a laminate obtained by sequentially laminating a crystalline semiconductor layer and an amorphous semiconductor layer, and
• wherein each of the pair of electrodes is formed of a laminate obtained by sequentially laminating a semiconductor layer doped with impurities and a metal layer;
• wherein each of the second thin-film transistors comprises:
• a gate electrode;
• a gate insulating film formed so as to cover the gate electrode;
• an semiconductor layer in an island shape formed on an upper surface of the gate insulating film so as to superimpose the gate electrode and to protrude from the gate electrode in a width direction of the gate electrode as viewed planarly;
• and
• a pair of electrodes formed on a surface of the semiconductor layer,
• wherein the semiconductor layer of the second thin-film transistors is formed of a laminate obtained by sequentially laminating the crystalline semiconductor layer and the amorphous semiconductor layer, and
• wherein the pair of electrodes is formed of the laminate obtained by sequentially laminating the semiconductor layer doped with the impurities and the metal layer,
• wherein the pair of electrodes is formed to extend in the width direction of the gate electrode.