Spin-valve or tunnel-junction radio-frequency oscillator

A method for implementing a radio-frequency oscillator, comprising:

• realising into a substrate, typically made of silicon, an electrically conductive lower electrode, intended to implement the magnetization precession of one of the layers of a magnetic stack, deposited on said substrate,
• depositing onto said substrate a stack constituted by two layers of ferromagnetic materials separated from one another by an insulating material capable of acting as a tunnel barrier or by a metal material capable of acting as a spin valve;
• depositing onto the lower layer of the stack, by Physical Vapour Deposition (PVD), Chemical Vapour Deposition (CVD), or by evaporation, a layer constituting a solid electrolyte, such as a GeSe or GeS or GeTe or As2Se chalcogenide;
• then depositing onto the solid electrolyte using the same technology a soluble electrode, constituted by silver or copper or zinc or indium and platinum;
• then subjecting the bi-layer so implemented to ultra-violet treatment or heat treatment, leading to the at least partial dissolution of the soluble electrode in the solid electrolyte;
• depositing onto the bi-layer subsequent to said treatment the upper layer of the stack of layers made out of ferromagnetic material;
• then subjecting the whole of the stack so treated to sufficient voltage to make one or more permanent or irreversible conductive nano-paths;
• and
• depositing an electrically conductive upper electrode.

A method for implementing a radio-frequency oscillator, comprising:

• realising into a substrate, typically made out of silicon, an electrically conductive lower electrode, intended to implement the magnetization precession of one of the layers of a magnetic stack, deposited on said substrate,
• depositing onto said substrate a stack constituted by two layers of ferromagnetic materials separated from one another by an intermediate layer made out of an insulating material capable of acting as a magnetic tunnel junction or out of a metal material capable of acting as a spin valve;
• depositing onto the intermediate layer of the stack, by Physical Vapour Deposition (PVD), Chemical Vapour Deposition (CVD), or by evaporation, a layer constituting a solid electrolyte, such as a GeSe or GeS or GeTe or As2Se chalcogenide;
• then depositing onto the solid electrolyte the layer constituting the other ferromagnetic layer of the magnetic stack, and particularly cobalt, and intended to act partially as a soluble electrode, thereby constituting with the layer constituting the solid electrolyte a bi-layer;
• then subjecting the bi-layer so implemented to ultra-violet treatment or heat treatment, leading to the at least partial dissolution of the soluble electrode in the solid electrolyte;
• then subjecting the whole of the stack so treated to sufficient voltage to make one or more permanent or irreversible conductive nano-paths;
• and
• depositing an electrically conductive upper electrode.