US 2010/0134146 A1Published application

Voltage level translator and method

AssigneeMicron Technology, Inc.

InventorONEGYUN NA

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Abstract

A level translator includes an NMOS input transistor and a PMOS input transistor having respective gates receiving an input voltage. The input transistors compare the input voltage to respective first and second supply voltages. The input voltage is also applied to an inverter that is powered by the first and second supply voltages. An output terminal is coupled to a third supply voltage through a PMOS output transistor and to a fourth supply voltage through an NMOS output transistor. The third and fourth supply voltages are outside of a range bounded by the first and second supply voltages. The respective drains of the input transistors and the output of the inverter are coupled to the gates of the output transistors in a manner that either turns the PMOS output transistor ON and the NMOS output transistor OFF or turns the NMOS output transistor ON and the PMOS output transistor OFF.

Claims8

Dependent claims

A level translator, comprising:

an inverter coupled to receive a binary input signal having first and second logic levels corresponding to first and second voltages, respectively;
a first level translating circuit having a first input coupled to receive the input signal and a second input coupled to an output of the inverter, the first level translating circuit being responsive to the input signal to couple a third voltage to an output node responsive to the input signal being one of the first logic level and the second logic level, and to place the output node at a high impedance responsive to the input signal being the other of the first logic level and the second logic level, the third voltage being outside a range of voltages bounded by the first and second voltages the first level translating circuit comprising:
an NMOS input transistor having a gate coupled to receive the input signal, a source coupled to a supply voltage having a magnitude equal to one of the first voltage and the second voltage, and a drain;
a first PMOS transistor having a drain coupled to the drain of the NMOS input transistor, a source coupled to a supply voltage having a magnitude equal to the third voltage, and a gate;
a second PMOS transistor having a drain coupled to the gate of the first PMOS transistor, a gate coupled to the drain of the first PMOS transistor, a source coupled to the supply voltage having a magnitude equal to the third voltage;
and
a PMOS output transistor having a source coupled to the supply voltage having a magnitude equal to the third voltage, a gate coupled to the gate of the second PMOS transistor, and a drain coupled to the output node of the first level translating circuit;
and
a second level translating circuit having a first input coupled to receive the input signal and a second input coupled to the output of the inverter, the second level translating circuit being responsive to the input signal to couple a fourth voltage to an output node responsive to the input signal being the other of the first logic level and the second logic level, and to place the output node at a high impedance responsive to the input signal being the one of the first logic level and the second logic level, the fourth voltage being different from the third voltage and being outside the range of voltages bounded by the first and second voltages.

6 more elements

A level translator, comprising:

an inverter coupled to receive a binary input signal having first and second logic levels corresponding to first and second voltages, respectively;
a first level translating circuit having a first input coupled to receive the input signal and a second input coupled to an output of the inverter, the first level translating circuit being responsive to the input signal to couple a third voltage to an output node responsive to the input signal being one of the first logic level and the second logic level, and to place the output node at a high impedance responsive to the input signal being the other of the first logic level and the second logic level, the third voltage being outside a range of voltages bounded by the first and second voltages;
and
a second level translating circuit having a first input coupled to receive the input signal and a second input coupled to the output of the inverter, the second level translating circuit being responsive to the input signal to couple a fourth voltage to an output node responsive to the input signal being the other of the first logic level and the second logic level, and to place the output node at a high impedance responsive to the input signal being the one of the first logic level and the second logic level, the fourth voltage being different from the third voltage and being outside the range of voltages bounded by the first and second voltages, the second level translating circuit comprising:
a PMOS input transistor having a gate coupled to receive the input signal, a source coupled to a supply voltage having a magnitude equal to other of the first voltage and the second voltage, and a drain;
a first NMOS transistor having a drain coupled to the source of the PMOS input transistor, a source coupled to a supply voltage having a magnitude equal to the fourth voltage, and a gate;
a second NMOS transistor having a drain coupled to the gate of the first NMOS transistor, a gate coupled to the drain of the first NMOS transistor, and a source coupled to the supply voltage having a magnitude equal to the fourth voltage;
and
an NMOS output transistor having a source coupled to the supply voltage having a magnitude equal to the fourth voltage, a gate coupled to the gate of the second NMOS transistor, and a drain coupled to the output node of the second level translating circuit.

6 more elements

Dependencies are inferred from the claim text.