Semiconductor device manufacturing method
AssigneeElpida Memory, Inc.
InventorMitsuhisa Watanabe
Life of this patent
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Abstract
A method for a semiconductor device includes the following processes. A first seal layer is formed in a cavity of a first mold, the first seal layer being in a liquid state. A second seal layer is formed over the first seal layer while the first seal layer is kept in the liquid state, and the second seal layer is in a liquid state. A semiconductor chip on a wiring board fixed on a second mold is immersed into the second seal layer. The first and second seal layers are thermally cured.
Claims20
A method for a semiconductor device comprising:
- forming a first seal layer in a cavity of a first mold, the first seal layer being in a liquid state;
- forming a second seal layer over the first seal layer, the first seal layer being kept in the liquid state, and the second seal layer being in a liquid state;
- immersing a semiconductor chip on a wiring board fixed on a second mold into the second seal layer;
- and
- thermally curing the first and second seal layers.
A method for a semiconductor device comprising:
- forming a first seal layer in a cavity of a first mold, the first seal layer being in a liquid state;
- forming a second seal layer over the first seal layer, the first seal layer being kept in the liquid state, and the second seal layer being in a liquid state;
- immersing a semiconductor chip on a wiring board fixed on a second mold into the second seal layer;
- and
- thermally curing the first and second seal layers.
A method for a semiconductor device, the method comprising:
- forming a first seal layer in a cavity of a first mold, the first seal layer being in a liquid state;
- and
- forming a second seal layer over the first seal layer, the first seal layer being kept in the liquid state, and the second seal layer being in a liquid state.
Dependencies are inferred from the claim text.