Semiconductor device and method for manufacturing semiconductor device
AssigneeSeiko Epson Corporation
InventorsTakayuki SAIKI, Shinya SATO, Hiroyuki TAKAMIYA
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Abstract
A semiconductor device includes: a plurality of external terminals; a plurality of semiconductor substrates that are layered; a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals; and a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates. In the device, the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits.
Claims6
A semiconductor device, comprising:
- a plurality of external terminals;
- a plurality of semiconductor substrates that are layered;
- a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals;
- and
- a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates, wherein the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits.
A method for manufacturing a semiconductor device including a plurality of external terminals and a plurality of semiconductor substrates that are layered, comprising:
- providing a plurality of electrostatic discharge protection circuits on any one of the semiconductor substrates;
- providing a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the plurality of external terminals and any of the plurality of electrostatic discharge protection circuits;
- and
- electrically connecting the plurality of electrostatic discharge protection circuits and the through electrode.
Dependencies are inferred from the claim text.