Microstructure device including a metallization structure with air gaps formed commonly with vias
OwnerThomas Werner, Kai Frohberg +1inventors
InventorsThomas Werner, Kai Frohberg, Frank Feustel
Life of this patent
Estimating the term…
Abstract
Air gaps may be formed in a metallization layer of a microstructure device on the basis of a patterning sequence in which respective via openings are also formed. Thereafter, the via openings and the air gaps may be closed by a deposition process without significantly affecting the interior of the corresponding openings. Thereafter, the further processing may be continued by forming respective trenches while maintaining integrity of the covered air gaps. Thus, the relative permittivity of the interlayer dielectric material may be efficiently reduced without adding additional process complexity.
Claims23
A method, comprising:
- forming a via opening and an air gap in a first dielectric layer of a metallization system of a semiconductor device in a common etch process;
- depositing a second dielectric layer so as to cover said via opening and said air gap;
- increasing a depth of said via opening so as to extend to a conductive region formed below said first dielectric layer while maintaining said air gap;
- and
- filling said via opening with a metal-containing material.
A method, comprising:
- forming an etch mask above a dielectric material of a metallization layer of a microstructure device, said dielectric material comprising a first cavity covered by a first portion of said dielectric material and a second cavity covered by a second portion of said dielectric material, said etch mask exposing said first portion and covering said second portion of said dielectric material;
- selectively opening said first cavity by using said etch mask;
- and
- filling said first cavity with a metal-containing material.
A microstructure device, comprising:
- a first dielectric layer of a metallization layer;
- a second dielectric layer formed on said first dielectric layer;
- a metal line formed in said second dielectric layer and extending into said first dielectric layer;
- and
- an air gap formed in said first dielectric layer, said air gap being capped by said second dielectric layer.
Dependencies are inferred from the claim text.