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US 2010/0133692 A1Published application
Process for producing silicic coating, silicic coating and semiconductor device
AssigneeFujitsu Limited
InventorsYasushi Kobayashi, Kouta Yoshikawa, Yoshihiro Nakata, Tadahiro Imada, Shirou Ozaki
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Abstract
A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.
Claims18
A method of producing a silicic coating included in a semiconductor device and having a density of at least 2.4 g/cm3, the method comprising:
- forming a silicic coating precursor by using at least one type of silane compound having a photosensitive functional group;
- and
- thereafter irradiating the silicic coating precursor with at least one type of light, either alone or in combination, to obtain the silicic coating.
Dependencies are inferred from the claim text.