Copper (i) compounds useful as deposition precursors of copper thin films
AssigneeAdvanced Technology Materials, Inc.
InventorsChongying Xu, Alexander Borovik, Thomas H. Baum
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Abstract
Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
Claims20
A method of making a VLSI device, comprising forming a VLSI device structure requiring metallization, and metallizing the VLSI device structure with copper interconnect lines, wherein said metallizing comprises vapor deposition of copper, utilizing a copper precursor composition comprising a copper precursor of the formula:
- wherein:
- R1 and R2 may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups;
- R3 is selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, hydrocarbyl derivatives of silyl groups and NR4R5, where R4 and R5 may be the same as or different from one another and is independently selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups.
A VLSI device, manufactured by a process including metallization of a VLSI device structure with copper interconnect lines by vapor deposition of copper, utilizing a copper precursor composition comprising a copper precursor of the formula:
- wherein:
- R1 and R2 may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups;
- R3 is selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, hydrocarbyl derivatives of silyl groups and NR4R5, where R4 and R5 may be the same as or different from one another and is independently selected from the group consisting of H, C1-C6 alkyl, C3-C7 cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups.
Dependencies are inferred from the claim text.