Semiconductor device and manufacturing method thereof
OwnerChung Hsing Tzuinventor
Life of this patent
Estimating the term…
Abstract
The present invention relates to a semiconductor device, and more particularly to a manufacturing method for said semiconductor device. The semiconductor device comprises a die that connects with a substrate or a lead frame via an adhesion layer, a metal layer, and/or a back metal layer. Furthermore, the adhesion layer can be made of aluminum, and the die can connect with the substrate or the lead frame by ultrasonic bonding technology, which can avoid heat damaging the die during the manufacturing process.
Claims20
A semiconductor device, comprising:
- a lead frame;
- a die positioned on said lead frame;
- and
- an adhesion layer positioned between said lead frame and said die, wherein said adhesion layer comprises aluminum.
A semiconductor device, comprising:
- a substrate;
- a die positioned on said substrate;
- and
- an adhesion layer positioned between said substrate and said die, wherein said adhesion layer comprises aluminum.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming an adhesion layer on a substrate or a lead frame, wherein said adhesion layer comprises aluminum;
- and
- connecting said adhesion layer with a die.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming an adhesion layer on a die, wherein said adhesion layer comprises aluminum;
- and
- connecting said adhesion layer with a lead frame or a substrate.
Dependencies are inferred from the claim text.