Group iii nitride semiconductor substrate production method, and group iii nitride semiconductor substrate
AssigneeHitachi Cable, Ltd.
InventorYuichi OSHIMA
Life of this patent
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Abstract
A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.
Claims10
A group III nitride semiconductor substrate production method, comprising:
- preparing a bulk crystal comprising a group III nitride semiconductor single crystal, the group III nitride semiconductor single crystal comprising one crystalline plane and an other crystalline plane, a hardness of the other crystalline plane being smaller than an hardness of the one crystalline plane;
- and
- cutting the prepared bulk crystal from the other crystalline plane to the one crystalline plane of the bulk crystal.
A group III nitride semiconductor substrate formed by cutting a group III nitride semiconductor single crystal, comprising:
- a bulk crystal comprising the group III nitride semiconductor single crystal, the group III nitride semiconductor single crystal comprising one crystalline plane and an other crystalline plane, a hardness of the other crystalline plane being smaller than a hardness of the one crystalline plane,
- wherein the bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.
A group III nitride semiconductor substrate, comprising:
- a group III nitride semiconductor single crystal comprising one crystalline plane and an other crystalline plane, a hardness of the other crystalline plane being smaller than a hardness of the one crystalline plane;
- and
- a substrate surface,
- wherein an absolute value of a difference between one surface roughness of the substrate surface in one direction parallel to the substrate surface and an other surface roughness of the substrate surface in an other direction different from the one direction is not more than 10 nm.
Dependencies are inferred from the claim text.