Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorTakao Atsumo
Life of this patent
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Abstract
Provided is a semiconductor device capable of increasing the capacitance of a capacitor, while reducing an area occupied by the capacitor and inductor on a substrate. The semiconductor device includes a first line; an interlayer insulating film that is formed on the first line and has a recess formed at a location corresponding to the first line; and a second line formed in the recess of the interlayer insulating film. The first line, the second line, and an insulating film formed between the first line and the second line constitute a capacitor. At least one of the first line and the second line constitutes an inductor.
Claims14
A semiconductor device comprising:
- a first line;
- an interlayer insulating film that is formed on the first line and has a recess formed at a location corresponding to the first line;
- and
- a second line formed in the recess of the interlayer insulating film, wherein
- the first line, the second line, and an insulating film formed between the first line and the second line constitute a capacitor, and
- at least one of the first line and the second line constitutes an inductor.
A method of manufacturing a semiconductor device comprising:
- forming a first line on a substrate;
- forming an interlayer insulating film on the first line;
- and
- forming a second line on the interlayer insulating film, wherein
- the interlayer insulating film has a recess formed at a location corresponding to the first line,
- the first line, the second line, and an insulating film formed between the first line and the second line constitute a capacitor, and
- at least one of the first line and the second line constitutes an inductor.
Dependencies are inferred from the claim text.