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US 2010/0133649 A1Published application
Contact efuse structure, method of making a contact efuse device containing the same, and method of making a read only memory containing the same
AssigneeUnited Microelectronics Corp.
InventorsYung-Chang Lin, Kuei-Sheng Wu, San-Fu Lin, Hui-Shen Shih
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Abstract
A contact efuse structure includes a silicon layer and a contact contacting the silicon layer with one end. When a voltage is applied to the contact, a void is formed at the end of the contact, and thus the contact is open. Such structure may be utilized in an efuse device or a read only memory. A method of making a contact efuse device and a method of making a read only memory are also disclosed.
Claims23
A contact efuse structure, comprising:
- a silicon layer;
- and
- a contact comprising a first end and a second end, the contact contacting the silicon layer with the first end, wherein after the contact is applied with a voltage, a void is formed at the first end to allow the contact to be open.
A method of making a contact efuse device, comprising:
- providing a substrate comprising a metal-oxide-semiconductor (MOS) transistor region and an efuse region;
- forming a first isolation structure in the substrate in the MOS transistor region and a second isolation structure in the substrate in the efuse region;
- forming a gate on the substrate in the MOS transistor region;
- forming an anode, a cathode, and a fuse link connecting the anode and the cathode on the second isolation structure in the efuse region;
- forming a source and a drain in the substrate at two sides of the gate, respectively;
- depositing a dielectric layer to cover the entire substrate;
- and
- forming at least a first contact to contact the anode, an only second contact to contact the cathode, and a third contact to contact the drain through the dielectric layer, respectively.
5 more elements
A method of making a read only memory array structure comprising:
- providing a substrate;
- forming a plurality of gate structures on the substrate;
- performing a doping process to form a doping region in the substrate at a side of each of the gate structures;
- forming a contact on each of the doping regions or the gate structures;
- and
- applying a voltage to at least one of the contacts to form a void to allow the at least one of the contacts to be open.
3 more elements
Dependencies are inferred from the claim text.