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US 2010/0133648 A1Published application
Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
AssigneeGlobalfoundries Inc.
InventorsRobert Seidel, Markus Nopper, Axel Preusse
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Abstract
In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.
Claims24
A method, comprising:
- forming a conductive cap layer on metal lines formed in a first dielectric material of a metallization layer of a microstructure device;
- forming an etch protection material on said conductive cap layer, said etch protection material exposing at least a portion of said first dielectric material between two neighboring ones of said metal lines;
- forming a recess in said at least a portion of said dielectric material;
- and
- depositing a second dielectric material so as to close said recess and form an air gap on the basis of said recess.
2 more elements
A method, comprising:
- forming an etch protection material on a conductive cap layer of a first metal line and a conductive cap layer of a second metal line, said first and second metal lines being formed in a dielectric material of a metallization system of a microstructure device;
- forming a recess in said dielectric material between said first metal line and said second metal line by using said etch protection material as a mask;
- removing said etch protection material at least from said conductive cap layer;
- and
- forming an air gap between said first and second metal lines on the basis of said recess.
2 more elements
A microstructure device, comprising:
- a first metal line formed in a dielectric material of a metallization layer, said first metal line comprising a first conductive cap layer forming a first interface with a first metal core material of said first metal line;
- a second metal line formed in the dielectric material of said metallization layer laterally adjacent to said first metal line, said second metal line comprising a second conductive cap layer forming a second interface with a second metal core material of said second metal line;
- and
- a single continuous air gap located in said dielectric material between said first and second metal lines.
1 more element
Dependencies are inferred from the claim text.