Semiconductor devices and semiconductor device manufacturing methods
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-joo Kim, Sang-moo Choi, Tae-hee Lee, Yoon-dong Park
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Abstract
Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
Claims20
A method of manufacturing a semiconductor device including a localized silicon on insulator (SOI) structure, the method comprising:
- forming one or more floating body patterns in a region of a bulk substrate;
- dividing the region of the bulk substrate into a lower bulk substrate region and a floating body region by etching lower regions of the one or more floating body patterns;
- and
- filling a region between the floating body region and the lower bulk substrate region with an insulating material.
A semiconductor device including a localized silicon on insulator (SOI) structure, comprising:
- a substrate region of a first conductive type bulk substrate;
- an insulating region in the substrate region;
- and
- a floating body region on the insulating region and separated from the substrate region by the insulating region, the floating body region and the substrate region including materials having similar characteristics.
Dependencies are inferred from the claim text.