System and method for forming metal interconnection in image sensor
OwnerKyeong-Keun Choiinventor
Life of this patent
Estimating the term…
Abstract
A method for forming a metal interconnection in an image sensor includes forming a first interlayer dielectric (ILD) layer having a contact plug over a substrate, forming a diffusion barrier layer over the first ILD layer, performing a forming gas annealing, forming a second ILD layer over the diffusion barrier layer, etching the second ILD layer and the diffusion barrier layer to form a trench, forming a conductive layer to fill the trench, and planarizing the conductive layer to form a metal interconnection electrically connected to the contact plug
Claims22
A method for forming a metal interconnection in an image sensor, the method comprising:
- forming a first interlayer dielectric (ILD) layer having substantially planar upper and lower surfaces and a contact plug that extends from the upper surface to the lower surface over a substrate;
- forming a diffusion barrier layer over the first ILD layer;
- and
- performing a forming-gas annealing process after said forming a diffusion barrier layer.
An image sensor comprising:
- a first interlayer dielectric (ILD) layer having substantially planar upper and lower surfaces and a contact plug that extends from the upper surface to the lower surface over a substrate;
- a diffusion barrier layer disposed over the first ILD layer;
- a second ILD layer disposed over the diffusion barrier layer;
- a trench etched through the second ILD layer and the diffusion barrier layer;
- and
- a conductive material within the trench, wherein the conductive layer is electrically connected to the contact plug.
Dependencies are inferred from the claim text.