US 2010/0133641 A1 · Image Sensor and Method for Manufacturing the Same

Abstract

Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a semiconductor substrate, an interconnection and an interlayer dielectric, a lower electrode layer, an image sensing device, a first via hole, a barrier pattern, a second via hole, and a metal contact. The semiconductor substrate comprises a readout circuitry. The interconnection and the interlayer dielectric are formed on the semiconductor substrate. The lower electrode layer is disposed over the interlayer dielectric. The image sensing device is disposed on the lower electrode layer. The first via hole is formed through the image sensing device. The barrier pattern is formed on a sidewall of the first via hole. The second via hole is formed through the lower electrode layer and the interlayer dielectric under the first via hole. The metal contact is formed in the first and second via holes.

Claims14

Dependent claims

An image sensor comprising:

a semiconductor substrate comprising a readout circuitry;
an interconnection and an interlayer dielectric on the semiconductor substrate, the interconnection electrically connected to the readout circuitry;
a lower electrode layer over the interlayer dielectric;
an image sensing device on the lower electrode layer;
a first via hole penetrating through the image sensing device to expose the lower electrode layer at a region corresponding to the interconnection;
a barrier pattern on a sidewall of the first via hole;
a second via hole penetrating through the lower electrode layer and the interlayer dielectric under the first via hole, the second via hole exposing the interconnection;
and
a metal contact filling the first and second via holes, the metal contact electrically connecting the lower electrode layer and the interconnection.

6 more elements

A method for manufacturing an image sensor, comprising:

forming a readout circuitry on a semiconductor substrate;
forming an interconnection and an interlayer dielectric on the semiconductor substrate, the interconnection being electrically connected to the readout circuitry;
forming an image sensing device on a carrier substrate;
forming a lower electrode layer on the image sensing device;
forming a junction layer on the lower electrode layer;
bonding the image sensing device to the interlayer dielectric using the junction layer as a bonding layer;
forming a first via hole through the image sensing device, the first via hole exposing a portion of the lower electrode layer at a region corresponding to the interconnection;
forming a barrier pattern on a sidewall of the first via hole;
forming a second via hole through the lower electrode layer and the interlayer dielectric under the first via hole, the second via hole exposing the interconnection;
and
forming a metal contact in the first via hole and the second via hole to electrically connect the lower electrode layer and the interconnection.

8 more elements

Dependencies are inferred from the claim text.

Image Sensor and Method for Manufacturing the Same

Life of this patent

Image Sensor and Method for Manufacturing the Same

Life of this patent

Abstract

Claims14