Avalanche photodiode
AssigneeMitsubishi Electric Corporation
InventorsEIJI YAGYU, EITARO ISHIMURA, MASAHARU NAKAJI
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Abstract
An avalanche photodiode comprises: a substrate; a semiconductor layer of a first conductivity type on the substrate; and an avalanche multiplication layer, a light absorption layer, and a window layer which are sequentially formed on the semiconductor layer, wherein apart of the window layer is a region of a second conductivity type, and the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer.
Claims13
An avalanche photodiode comprising:
- a substrate;
- a semiconductor layer of a first conductivity type on the substrate;
- and
- an avalanche multiplication layer, a light absorption layer, and a window layer which are sequentially formed on the semiconductor layer,
- wherein a part of the window layer is a region of a second conductivity type, and
- the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer.
An avalanche photodiode comprising:
- a substrate;
- a semiconductor layer of a first conductivity type on the substrate;
- and
- an avalanche multiplication layer, alight absorption layer, and a window layer of a second conductivity type which are sequentially formed on the semiconductor layer,
- wherein the window layer includes a groove which reaches a layer contacting a lower side of the window layer, and
- the light absorption layer includes a first light absorption layer, and a second light absorption layer which has higher electric conductivity than electric conductivity of the first light absorption layer.
Dependencies are inferred from the claim text.