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US 2010/0133628 A1Published application
High-k gate electrode structure formed after transistor fabrication by using a spacer
AssigneeAdvanced Micro Devices, Inc.
InventorsKai FROHBERG, Uwe GRIEBENOW, Katrin REICHE, Heike BERTHOLD
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Abstract
During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.
Claims21
A method, comprising:
- removing a first gate electrode material from a gate electrode structure of a transistor, said transistor being laterally embedded in a dielectric material;
- forming a sidewall spacer in an opening formed in said dielectric material by removing said first gate electrode material;
- and
- forming a second gate electrode material on a high-k dielectric layer formed at least at a bottom of said opening.
1 more element
A method, comprising:
- removing a placeholder material of a gate electrode structure of a transistor by forming an opening in a dielectric material;
- depositing a first material layer in said opening;
- performing an anisotropic etch process to remove a portion of said first material layer;
- and
- depositing a second material layer to fill said opening, said second material layer comprising a metal-containing gate electrode material.
2 more elements
A semiconductor device, comprising:
- a high-k dielectric layer formed above a channel region of a transistor;
- and
- a metal-containing electrode material formed on said high-k dielectric layer and having a top surface, said metal-containing electrode material having a first length at an interface with said high-k dielectric material and having a second length at said top surface, said first length being approximately 50 nm or less, said second length being less than or greater than said first length by approximately 15 percent of said first length or less.
Dependencies are inferred from the claim text.