US 2010/0133622 A1 · Semiconductor device including MOSFET with controlled threshold voltage, and manufacturing method of the same

Abstract

Provided is a semiconductor device including an N-MOSFET and a P-MOSFET on a semiconductor substrate. The N-MOSFET is formed on the semiconductor substrate, and includes a first gate insulating film including a first high-dielectric-constant film having a higher dielectric constant than a silicon oxide film. The P-MOSFET is formed on the semiconductor substrate, and includes a second gate insulating film including a second high-dielectric-constant film having a higher dielectric constant than a silicon oxide film. The first high-dielectric-constant film contains a first metal, and a concentration of the first metal increases from a surface of the first high-dielectric-constant film toward the semiconductor substrate. The second high-dielectric-constant film contains a second metal, and a concentration of the second metal decreases from a surface of the second high-dielectric-constant film toward the semiconductor substrate.

Claims16

Dependent claims

A semiconductor device comprising an N-channel MOSFET and a P-channel MOSFET on a semiconductor substrate, wherein

the N-channel MOSFET is formed on the semiconductor substrate, and includes a first gate insulating film including a first high-dielectric-constant film having a higher dielectric constant than a silicon oxide film,
the P-channel MOSFET is formed on the semiconductor substrate, and includes a second gate insulating film including a second high-dielectric-constant film having a higher dielectric constant than a silicon oxide film,
the first high-dielectric-constant film contains a first metal, and a concentration of the first metal increases from a surface of the first high-dielectric-constant film toward the semiconductor substrate, and
the second high-dielectric-constant film contains a second metal, and a concentration of the second metal decreases from a surface of the second high-dielectric-constant film toward the semiconductor substrate.

1 more element

A manufacturing method of a semiconductor device, which includes an N-channel MOSFET and a P-channel MOSFET on a semiconductor substrate, comprising:

forming a film containing a first metal in an N-channel MOSFET forming region and a P-channel MOSFET formation region on the semiconductor substrate;
removing the film containing the first metal, from the P-channel MOSFET formation region;
forming a high-dielectric-constant film in the N-channel MOSFET forming region and the P-channel MOSFET formation region, the high-dielectric-constant film having a higher dielectric constant than a silicon oxide film;
forming a film containing a second metal in the N-channel MOSFET forming region and the P-channel MOSFET formation region;
removing the film containing the second metal, from the N-channel MOSFET formation region;
and
by applying heat treatment to the semiconductor substrate, forming a first high-dielectric-constant film through diffusion of the first metal in the high-dielectric-constant film, and also forming a second high-dielectric-constant film through diffusion of the second metal in the high-dielectric-constant film.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device including MOSFET with controlled threshold voltage, and manufacturing method of the same

Life of this patent

Semiconductor device including MOSFET with controlled threshold voltage, and manufacturing method of the same

Life of this patent

Abstract

Claims16