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US 2010/0133612 A1Published application
Electronic device with asymmetric gate strain
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Kunal R. Parekh
Life of this patent
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Abstract
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
Claims31
A transistor comprising:
- a semiconductor substrate having a first doping type;
- two diffused regions in the substrate having a doping type opposite of the substrate forming a source region and a drain region;
- a channel region disposed between the source region and drain region;
- a dielectric layer disposed above the channel region;
- and
- a gate electrode disposed upon the dielectric layer substantially covering the channel region and having a first portion disposed above at least a portion of the source region and a second portion disposed above at least a portion of the drain region, the first portion having a material composition and the second portion including the material composition, the first portion of the gate electrode being thicker than the second portion of the gate electrode such that the material composition of the first portion and the second portion is configured as a step above the dielectric layer, the gate electrode having an applied stress condition that is different at the first portion as compared to the second portion.
3 more elements
An electronic device comprising:
- a substrate;
- a source region and a drain region of a transistor disposed in the substrate;
- a channel region disposed between the source region and drain region;
- a dielectric disposed above the channel region;
- and
- a gate electrode disposed upon the dielectric above the channel region, the gate electrode configured with a step above the dielectric, the gate electrode having a stress condition in a thicker side of the step that is different from a stress condition in a thinner side of the step.
3 more elements
An electronic device comprising:
- a substrate;
- a source region and a drain region of a transistor disposed in the substrate;
- a channel region disposed between the source region and drain region;
- a dielectric disposed above the channel region;
- a gate electrode disposed upon the dielectric above the channel region, the gate electrode configured with a step above the dielectric;
- and
- a first gate spacer contacting the gate electrode and a second gate spacer contacting the gate electrode, the first gate spacer separated from the second gate spacer by the gate electrode, the first and second gate spacer with the gate electrode configured such that a stress condition in a thicker side of the step is different from a stress condition in a thinner side of the step.
4 more elements
A method of forming a transistor, the method comprising:
- forming a gate electrode having two dielectric spacers over a gate oxide over a substrate, the formed gate electrode including a step structure;
- removing one of the two dielectric spacers;
- replacing the removed dielectric spacer with a different dielectric spacer providing an asymmetric strain;
- and
- forming source and drain regions aligned with the two dielectric spacers.
2 more elements
A method of forming a transistor, the method comprising:
- forming a gate electrode having a bottom side disposed over a gate dielectric, a top side opposite the bottom side, a first side extending between the top and bottom and a second side opposite the first side;
- removing a portion of the top side of the first side of the gate electrode to form a step structure to provide an asymmetric strain;
- and
- forming source and drain regions aligned with the gate electrode.
1 more element
A method of forming a transistor, the method comprising:
- forming a gate electrode having a bottom side disposed over a gate dielectric, a top side opposite the bottom side, a first side extending between the top and bottom and a second side opposite the first side;
- forming a patterned photo resist layer on the gate electrode;
- processing the patterned photo resist layer and the gate electrode to form the gate electrode with a step structure to provide an asymmetric strain.
- ion implanting an exposed portion of the first side.
1 more element
Dependencies are inferred from the claim text.