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US 2010/0133606 A1Published application
Three-dimensional semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsYounggoan Jang, Sunghoi Hur, Jinho Kim, Sunil Shim, Su-Youn Yi, HuiChang Moon
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Abstract
A three-dimensional semiconductor memory device includes word lines and gate interlayer insulation layers that are alternatively stacked on a semiconductor substrate while extending in a horizontal direction, a vertical channel layer that faces the word lines and extends upwardly from the semiconductor substrate, and a channel pad that extends from the vertical channel layer and is disposed on an uppermost gate interlayer insulation layer of the gate interlayer insulation layers.
Claims10
A three-dimensional semiconductor memory device comprising:
- word lines and gate interlayer insulation layers that are alternately stacked on a semiconductor substrate while extending in a horizontal direction;
- a vertical channel layer that faces the word lines and extends upwardly from the semiconductor substrate;
- and
- a channel pad that extends from the vertical channel layer and is disposed on an uppermost gate interlayer insulation layer of the gate interlayer insulation layers.
1 more element
Dependencies are inferred from the claim text.