Semiconductor Devices Having Gate Structures with Conductive Patterns of Different Widths and Methods of Fabricating Such Devices

A semiconductor device, comprising:

• a first dielectric pattern on a semiconductor substrate;
• a data storage pattern on the first dielectric pattern;
• a second dielectric pattern on the data storage pattern so that the data storage pattern is between the first and second dielectric patterns;
• a first conductive pattern on the second dielectric pattern;
• and
• a second conductive pattern on the first conductive pattern so that the first conductive pattern is between the second dielectric pattern and the second conductive pattern,
• wherein the first conductive pattern has a first width that is less than a second width of the second conductive pattern.