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US 2010/0133601 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAya MIYAZAKI, Mitsuaki OSAME, Hiroyuki MIYAKE, Shunpei YAMAZAKI
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Abstract
A semiconductor device is provided, which comprises at least a cell including a plurality of memory elements connected in series. Each of the plurality of memory elements includes a channel formation region, a source and drain regions, a floating gate, and a control gate. Each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region.
Claims18
A semiconductor device comprising:
- a memory element including a channel formation region, source and drain regions, a floating gate, and a control gate, and
- wherein each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region.
A semiconductor device comprising:
- a memory element including a channel formation region, source and drain regions, a floating gate, and a control gate, and
- wherein:
- each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region,
- a conductivity type of the source and drain regions is different from that of the semiconductor impurity region, and
- the source and drain regions include an impurity element at a higher concentration than the semiconductor impurity region.
2 more elements
A semiconductor device comprising:
- a memory element including a channel formation region, source and drain regions, a floating gate, and a control gate, and
- wherein:
- each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region,
- a conductivity type of the source and drain regions is different from that of the semiconductor impurity region,
- the source and drain regions include an impurity element at a higher concentration than the semiconductor impurity region,
- wherein the source and drain regions is electrically connected to the semiconductor impurity region through a region, and
- the source and drain regions and the semiconductor impurity region include the impurity element at a higher concentration than the region.
4 more elements
Dependencies are inferred from the claim text.