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US 2010/0133600 A1Published application
Semiconductor devices having increased sensing margin
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-joo Kim, Sang-moo Choi, Tae-hee Lee, Yoon-dong Park, Dae-kil Cha
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Abstract
One transistor (1-T) dynamic random access memories (DRAM) having improved sensing margins that are relatively independent of the amount of carriers stored in a body region thereof.
Claims20
A 1-transistor dynamic random access memory (1-T DRAM) comprising:
- a substrate region;
- an insulating region on the substrate region;
- a body region on the insulating region, the body region configured to store carriers;
- a first dielectric region on the body region;
- a first floating gate pattern on the first dielectric region;
- a second dielectric region on the first floating gate pattern;
- and
- a control gate pattern on the second dielectric region, the control gate pattern configured to control an amount of the carriers stored in the body region.
5 more elements
A 1-transistor dynamic random access memory (1-T DRAM) comprising:
- a substrate region;
- an insulating region on the substrate region;
- a body region on the insulating region, the body region configured to store carriers;
- a dielectric region on the body region;
- and
- a control gate pattern on the dielectric region, the control gate pattern configured to control an amount of the carriers stored in the body region.
3 more elements
A method of improving a sensing margin of a one transistor dynamic random access memory (1-T DRAM), the method comprising:
- establishing a thickness of at least one region of a gate stack of a 1-T DRAM cell such that a capacitance of the gate stack corresponds to a desired sensing margin, the gate stack including a first dielectric region, a floating gate pattern region and a second dielectric region.
Dependencies are inferred from the claim text.