Solid-state imaging device
AssigneeRosnes Corporation
InventorSumio Terakawa
Life of this patent
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Abstract
A solid-state imaging device includes pixels arranged in a matrix on a semiconductor substrate, the pixels each including: a photodiode for photoelectric-converting an incident light beam; a readout transistor for reading out a signal charge from the photodiode; and a floating diffusion region for converting the read out signal charge into a voltage, wherein the semiconductor substrate is of an n-type, a first p-type well is provided below an n-type forming layer of the photodiode so as to be located at a distant position from a surface of the n-type substrate at the photodiode side, and partially or entirely below the readout transistor, the first p-type well is formed so as to reach the surface of the semiconductor substrate.
Claims8
1-9. (canceled)
A solid-state imaging device having pixels arranged in a matrix on a semiconductor substrate, the pixels each including:
- a photodiode for photoelectric-converting an incident light beam;
- a readout transistor for reading out a signal charge from the photodiode;
- and a floating diffusion region for converting the read out the signal charge into a voltage, wherein
- the semiconductor substrate is of an n-type,
- a first p-type well is provided below an n-type forming layer of the photodiode so as to be located at a distant position from a surface of the n-type substrate at the photodiode side,
- a region, in which the n-type substrate is present, is provided between the n-type forming layer of the photodiode and the first p-type well;
- and
- partially or entirely below the readout transistor, the first p-type well is formed so as to reach the surface of the semiconductor substrate.
A solid-state imaging device having pixels arranged in a matrix on a semiconductor substrate, the pixels each including:
- a photodiode for photoelectric-converting an incident light beam;
- a readout transistor for reading out a signal charge from the photodiode;
- a floating diffusion region for converting the read out the signal charge into a voltage;
- and a readout circuit for reading out a signal of the floating diffusion region, wherein
- the semiconductor substrate is of an n-type,
- a first p-type well is provided at a distant position from a surface of the n-type substrate at the photodiode side,
- a region, in which the n-type substrate is present, is provided between the n-type forming layer of the photodiode and the first p-type well;
- and
- a second p-type well is provided, the second p-type well including partially or entirely the readout transistor, the floating diffusion region, and the readout circuit, and
- partially or entirely below the readout transistor, the second p-type well is formed so as to reach the surface of the semiconductor substrate.
A solid-state imaging device having pixels arranged in a matrix on a semiconductor substrate, the pixels each including:
- a photodiode for photoelectric-converting an incident light beam;
- a readout transistor for reading out a signal charge from the photodiode;
- and a floating diffusion region for converting the read out the signal charge into a voltage, wherein
- the semiconductor substrate is of an n-type,
- a first p-type well is provided at a distant position from a surface of the n-type substrate at the photodiode side,
- a region, in which the n-type substrate is present, is provided between an n-type forming layer of the photodiode and the first p-type well,
- partially or entirely below the readout transistor, the third p-type well is formed so as to reach the surface of the semiconductor substrate.
Dependencies are inferred from the claim text.