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US 2010/0133594 A1Published application
Semiconductor structure and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorHung-Sung Lin
Life of this patent
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Abstract
A semiconductor structure including a substrate, a gate dielectric layer, a gate, a source region and a drain region is provided. The gate dielectric layer is disposed on the substrate. At least one recess is disposed in the substrate. The gate is disposed on the gate dielectric layer and in the recess. The source and drain regions are respectively disposed in the substrate beside the gate.
Claims19
A semiconductor structure, comprising:
- a gate dielectric layer, disposed on a substrate, wherein at least one recess is disposed in the substrate;
- a gate, disposed on the gate dielectric layer and in the substrate;
- and
- a source region and a drain region, respectively disposed in the substrate beside the gate.
1 more element
A method of fabricating a semiconductor structure, comprising:
- forming a gate dielectric layer on the substrate;
- forming at least one recess in the substrate;
- forming a gate on the gate dielectric layer and in the recess;
- and
- forming a source region and a drain region in the substrate beside the gate.
2 more elements
Dependencies are inferred from the claim text.