US 2010/0133591 A1 · METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR

Abstract

The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

Claims17

Dependent claims

A method for passivating a semiconductor component having at least one chemosensitive electrode, the method comprising:

blinding at least the at least one chemosensitive electrode is blinded by applying one of a glass layer and a glass-ceramic layer.

Dependencies are inferred from the claim text.

Facts

Application

12/619,304Filed 16 Nov 2009

Priority

DE 102008043858.819 Nov 2008

Published

3 Jun 2010

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G01N 27/414
Cells and electrode assemblies: ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
H10W 74/43
Characterised by their materials: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
H10W 74/476
Comprising organic materials, e.g. plastics or resins: organic materials comprising silicon
H10D 30/60
Field-effect transistors [FET]: insulated-gate field-effect transistors [IGFET]

Method for passivating a field-effect transistor

Life of this patent

Method for passivating a field-effect transistor

Life of this patent

Abstract

Claims17