Semiconductor device structure and method of manufacture thereof
AssigneeDurham Scientific Crystals Limited
InventorsArnab Basu, Max Robinson
Life of this patent
Estimating the term…
Abstract
A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.
Claims24
A semiconductor device structure comprising a first bulk crystal semiconductor material, and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of at least one bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the said removed bulk crystal semiconductor material
A method of forming a semiconductor device comprising the steps of:
- providing a first bulk crystal semiconductor material;
- optionally forming an interfacial layer on a surface of the first bulk crystal semiconductor material;
- forming a second bulk crystal semiconductor material of a Group II-VI material dissimilar to the first bulk crystal semiconductor material thereon;
- selectively removing areas of at least one of the bulk crystal semiconductor materials to produce patterned areas of substantially reduced thickness of the removed material.
Dependencies are inferred from the claim text.