Semiconductor light emitting device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTae Sung JANG, Su Yeol Lee, Jong Gun Woo
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Abstract
Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.
Claims12
A semiconductor light emitting device comprising:
- a first conductivity type semiconductor layer;
- an active layer disposed on the top of the first conductivity type semiconductor layer;
- and
- a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.
A method of manufacturing a semiconductor light emitting device, the method comprising:
- stacking a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate;
- stacking a mask layer on the top of the second conductivity type semiconductor layer;
- annealing the mask layer to be agglomerated, forming a plurality of mask patterns in the form of droplets;
- and
- dry etching the second conductivity type semiconductor layer on which the mask patterns are formed, to form light extraction patterns in the top of the second conductivity type semiconductor layer, the light extraction patterns each having a columnar portion and a hemispherical top portion.
Dependencies are inferred from the claim text.