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US 2010/0133567 A1Published application
Semiconductor light emitting device and method of manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorHyo Kun Son
Life of this patent
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Abstract
A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
Claims20
A semiconductor light emitting device comprising:
- a first conductive semiconductor layer comprising a concave or convex portion;
- an active layer on the first conductive semiconductor layer;
- and
- a second conductive semiconductor layer on the active layer.
1 more element
A semiconductor light emitting device comprising:
- a plurality of n-type semiconductor layer;
- a plurality of concave or convex lens portions formed between the n-type semi-conductor layers;
- an active layer on the n-type semiconductor layers;
- and
- at least one conductive semiconductor layer on the active layer.
2 more elements
A method of manufacturing a semiconductor light emitting device, the method comprising:
- forming a 1n-type nitride layer;
- forming a concave or convex lens portion on a surface of the 1n-type nitride layer;
- forming a 2n-type nitride layer on the 1n-type nitride layer;
- forming an active layer on the 2n-type nitride layer;
- and
- forming at least one conductive semiconductor layer on the active layer.
3 more elements
Dependencies are inferred from the claim text.